- 您现在的位置：买卖IC网 > Sheet目录337 > LH28F160S3HNS-TV (Sharp Microelectronics)IC FLASH 16MBIT 100NS 56SSOP
Start
LHF16KTV
24
Write E8H,
Start Address
Read Extend
Status Register
Bus
Operation
Write
Command
Setup
Multi Word/Byte Write
Comments
Data=E8H
Addr=Start Address
No
Read
Extended Status Register Data
XSR.7=
1
0
Write Buffer
Time Out
Yes
Standby
Check XSR.7
1=Multi Word/Byte Write Ready
0=Multi Word/Byte Write Busy
Write Word or Byte Count (N)-1,
Start Address
Write Buffer Data,
Start Address
X=1
Write
(Note1)
Write
(Note2,3)
Write
(Note4,5)
Data=Word or Byte Count (N)-1
Addr=Start Address
Data=Buffer Data
Addr=Start Address
Data=Buffer Data
Addr=Device Address
Data=D0H
Yes
X=N
No
Write
Read
Addr=X
Status Register Data
Check SR.7
Abort Buffer
Write Commnad?
Yes
Write Another
Block Address
Standby
1=WSM Ready
0=WSM Busy
No
Write Buffer Data,
Device Address
X=X+1
Write D0H
Another
Buffer
Write ?
No
Read Status
Register
Yes
Multi Word/Byte Write
Abort
Suspend Multi Word/Byte
No
Write Loop
1. Byte or word count values on DQ 0-7 are loaded into the count register.
2. Write Buffer contents will be programmed at the start address.
3. Align the start address on a Write Buffer boundary for maximum
programming performance.
4.The device aborts the Multi Word/Byte Write command if the current address is
outside of the original block address.
5.The Status Register indicates an "improper command sequence" if the Multi
Word/Byte command is aborted. Follow this with a Clear Status Register command.
SR full status check can be done after each multi word/byte write,
or after a sequence of multi word/byte writes.
Write FFH after the last multi word/byte write operation to place device in
read array mode.
SR.7=
0
Suspend
Multi Word/Byte
Yes
Write
1
Full Status
Check if Desired
Multi Word/Byte Write
Complete
Figure 8. Automated Multi Word/Byte Write Flowchart
Rev. 2.0
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
LH28F160S5HNS-S1
IC FLASH 16MBIT 70NS 56SSOP
LH28F320S3HNS-ZM
IC FLASH 32MBIT 110NS 56SSOP
LH28F320SKTD-ZR
IC FLASH 32MBIT 70NS 48TSOP
LHF00L28
IC FLASH 16MBIT 70NS 48TSOP
LPM409 CHASSIS
STNRD 4SLOT CHASSIS W/INPUT LEAD
LS15RB1201J04
POE SPLITTER 10.8W 12V @0.9A
LT1932ES6#TRMPBF
IC LED DRIVR WHITE BCKLGT TSOT-6
LT1937ES5#TRMPBF
IC LED DRIVR WHITE BCKLGT TSOT-5
相关代理商/技术参数
LH28F160S3HR-L10
制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
LH28F160S3HR-L13
制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3HT-L10
制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3V 16Mbit 2M/1M x 8bit/16bit 100ns 56-Pin TSOP
LH28F160S3HT-L10A
功能描述:IC FLASH 16MBIT 100NS 56TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘
LH28F160S3HT-L13
制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F160S3HT-L75A
制造商:Sharp Microelectronics Corporation 功能描述:
LH28F160S3HT-TF
功能描述:IC FLASH 16MBIT 100NS 56TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869
LH28F160S3-L10
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY